''Time-resolved photoluminescence on GaN nano objects grown on (11-22) GaN templates: a transition from a 0D towards a 1D excitonic behaviour''

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, Y
Holmes, M
Shon, Y
Yoon, I
Im, H
Taylor, R

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, YS
Holmes, MJ
Shon, Y
Yoon, IT
Im, H
Taylor, RA

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

Time-resolved photoluminescence of GaN/AlN quantum dots emitting at 300 nm

SELLES, Julien
Cassabois, Guillaume
Guillet, Thierry
Semond, Fabrice
Valvin, Pierre

February 2014

International audienceProperties of self-assembled quantum dots (QDs), often referred to as artifici...

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Rosales, Daniel
Bretagnon, Thierry
Gil, Bernard
Kahouli, A
Brault, Julien
Damilano, B.
Massies, Jean
Durnev, M. V.
Kavokin, A.

September 2013

International audienceWe report an unusual temperature dependence of exciton lifetimes in arrays of ...

Doctor of Philosophy

Simonsen, Lauren Rose Richey

January 2019

dissertationGallium nitride (GaN) is an increasingly important semiconductor material showing promis...

Time-Resolved photoluminescence studies of cubic and hexagonal GaN quantum dots

J. SIMON
E. MARTINEZ-GUERRERO
C. ADELMANN
MULA GUIDO
B. DAUDIN
G. FEUILLET
H. MARIETTE
N.T. PELEKANOS

January 2001

We report time-integrated and time-resolved photoluminescence (PL) experiments on cubic and hexagona...

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Na, Jong H.
Taylor, Robert A.
Rice, James H.
Robinson, James W.
Lee, Kwan H.
Park, Young S.
Park, Chang M.
Kang, Tae W.

January 2005

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-reso...

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Na, J
Taylor, R
Rice, J
Robinson, J
Lee, K
Park, Y
Park, C
Kang, T

January 2005

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-reso...

Time-Resolved Studies of InGaN/GaN Quantum Dots

January 2016

We report on structural and optical properties of InGaN inclusions in a GaN matrix. High-resolu-tion...

Optical properties of self-assembled InGaN/GaN quantum dots

Taliercio, T.
Lefebvre, P.
Morel, A.
Gallart, M.
Allegre, J.
Gil, B.
Mathieu, H.
Grandjean, N.
Massies, J.

October 2010

Optical spectroscopy under varying temperature is used to investigate samples containing planes of s...

Photoluminescent characteristics of Ni-catalyzed GaN nanowires

Yoo, Jinkyoung
Hong, Young-Joon
An, Sung Jin
Yi, Gyu-Chul
Cheon, Bonghwan
Joo, Taiha
Kim, Jong-Wook
Lee, Jeong-Soo

July 2006

The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grow...

Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

Reid, Benjamin P.L.
Taylor, Robert A.

January 2013

Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pul...

GaN nanorods grown on Si (111) substrates and exciton localization

Park, Y
Holmes, M
Shon, Y
Taek Yoon, I
Im, H
Taylor, R

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

Huang, JS
Chen, Z
Luo, XD
Xu, ZY
Ge, WK

January 2004

We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

Huang JS
Chen Z
Luo XD
Xu ZY
Ge WK
Huang, JS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

January 2004

We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, Y
Holmes, M
Shon, Y
Yoon, I
Im, H
Taylor, R

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, YS
Holmes, MJ
Shon, Y
Yoon, IT
Im, H
Taylor, RA

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

Time-resolved photoluminescence of GaN/AlN quantum dots emitting at 300 nm

SELLES, Julien
Cassabois, Guillaume
Guillet, Thierry
Semond, Fabrice
Valvin, Pierre

February 2014

International audienceProperties of self-assembled quantum dots (QDs), often referred to as artifici...

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Rosales, Daniel
Bretagnon, Thierry
Gil, Bernard
Kahouli, A
Brault, Julien
Damilano, B.
Massies, Jean
Durnev, M. V.
Kavokin, A.

September 2013

International audienceWe report an unusual temperature dependence of exciton lifetimes in arrays of ...

Doctor of Philosophy

Simonsen, Lauren Rose Richey

January 2019

dissertationGallium nitride (GaN) is an increasingly important semiconductor material showing promis...

Time-Resolved photoluminescence studies of cubic and hexagonal GaN quantum dots

J. SIMON
E. MARTINEZ-GUERRERO
C. ADELMANN
MULA GUIDO
B. DAUDIN
G. FEUILLET
H. MARIETTE
N.T. PELEKANOS

January 2001

We report time-integrated and time-resolved photoluminescence (PL) experiments on cubic and hexagona...

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Na, Jong H.
Taylor, Robert A.
Rice, James H.
Robinson, James W.
Lee, Kwan H.
Park, Young S.
Park, Chang M.
Kang, Tae W.

January 2005

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-reso...

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Na, J
Taylor, R
Rice, J
Robinson, J
Lee, K
Park, Y
Park, C
Kang, T

January 2005

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-reso...

Time-Resolved Studies of InGaN/GaN Quantum Dots

January 2016

We report on structural and optical properties of InGaN inclusions in a GaN matrix. High-resolu-tion...

Optical properties of self-assembled InGaN/GaN quantum dots

Taliercio, T.
Lefebvre, P.
Morel, A.
Gallart, M.
Allegre, J.
Gil, B.
Mathieu, H.
Grandjean, N.
Massies, J.

October 2010

Optical spectroscopy under varying temperature is used to investigate samples containing planes of s...

Photoluminescent characteristics of Ni-catalyzed GaN nanowires

Yoo, Jinkyoung
Hong, Young-Joon
An, Sung Jin
Yi, Gyu-Chul
Cheon, Bonghwan
Joo, Taiha
Kim, Jong-Wook
Lee, Jeong-Soo

July 2006

The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grow...

Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

Reid, Benjamin P.L.
Taylor, Robert A.

January 2013

Experimental investigations of the optical properties of InGaN/GaN quantum dots are presented. A pul...

GaN nanorods grown on Si (111) substrates and exciton localization

Park, Y
Holmes, M
Shon, Y
Taek Yoon, I
Im, H
Taylor, R

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

Huang, JS
Chen, Z
Luo, XD
Xu, ZY
Ge, WK

January 2004

We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

Huang JS
Chen Z
Luo XD
Xu ZY
Ge WK
Huang, JS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.

January 2004

We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, Y
Holmes, M
Shon, Y
Yoon, I
Im, H
Taylor, R

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

GaN nanorods grown on Si (111) substrates and exciton localization.

Park, YS
Holmes, MJ
Shon, Y
Yoon, IT
Im, H
Taylor, RA

January 2011

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved phot...

Time-resolved photoluminescence of GaN/AlN quantum dots emitting at 300 nm

SELLES, Julien
Cassabois, Guillaume
Guillet, Thierry
Semond, Fabrice
Valvin, Pierre

February 2014

International audienceProperties of self-assembled quantum dots (QDs), often referred to as artifici...

''Time-resolved photoluminescence on GaN nano objects grown on (11-22) GaN templates: a transition from a 0D towards a 1D excitonic behaviour''

Abstract

Extracted data

''Time-resolved photoluminescence on GaN nano objects grown on (11-22) GaN templates: a transition from a 0D towards a 1D excitonic behaviour''

Abstract

Extracted data

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