International audienceThe temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature T . In contrast, when the exciton-lattice coupling is strong, the line shape is Gaussian with a width increasing sublinearly with the lattice temperature, proportional to sqrt(T) . While the former case is commonly reported in the literature, here the latter is reported for hexagonal boron nitride. Thus the theoretical predictions of Toyozawa [Prog. Theor. Phys. 20, 53 (1958)] are supported by demonstrating that the ex...
International audienceIn this manuscript we study luminescence of hexagonal boron nitride (hBN) by m...
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon e...
International audienceDispersionless energy bands in k space are a peculiar property gathering incre...
We present an ab initio method to calculate phonon-assisted absorption and emission spectra in the p...
International audienceWe study the deep-ultraviolet emission in Bernal boron nitride as a function o...
International audienceWe report on the ultraviolet optical response of a color center in hexagonal b...
Understanding and manipulating the quantum interlayer exciton-phonon coupling in van der Waals heter...
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission ...
The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eig...
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviol...
International audienceIn this manuscript we study luminescence of hexagonal boron nitride (hBN) by m...
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon e...
International audienceDispersionless energy bands in k space are a peculiar property gathering incre...
We present an ab initio method to calculate phonon-assisted absorption and emission spectra in the p...
International audienceWe study the deep-ultraviolet emission in Bernal boron nitride as a function o...
International audienceWe report on the ultraviolet optical response of a color center in hexagonal b...
Understanding and manipulating the quantum interlayer exciton-phonon coupling in van der Waals heter...
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission ...
The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eig...
Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviol...
International audienceIn this manuscript we study luminescence of hexagonal boron nitride (hBN) by m...
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon e...
International audienceDispersionless energy bands in k space are a peculiar property gathering incre...