International audienceA novel method is presented with the aim to perform minority carrier diffusion length map on cross-sectional samples. The method is based on one Electron-Beam Induced Current (EBIC) acquisition and on the analyze of the EBIC signal slope variation on each scanned points. This method is applied on a pinned photodiode array realized on a low doped silicon epitaxy, and the electron diffusion length map which is extracted is in good accordance with our expectation taking into account the doping distribution of the device. A TCAD simulation also confirms quantitatively the measured diffusion length map. Advantages and drawbacks of this method are discussed in this study
The EBIC mode of an SEM has generally been used to measure the minority carrier properties of semico...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
A novel method is presented with the aim to perform minority carrier diffusion length map on cross-s...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
A new method of extracting minority carrier diffusion length from within a confined region of materi...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
The existing EBIC techniques for diffusion-length (DL) determination are reviewed and a new techniqu...
Junction-EBIC is used to characterize minority carrier diffusion lengths in heterojunction thin film...
Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of cu...
Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced cu...
A method of measurement of diffusion length L in p type c-Si wafers based on the lateral collection ...
A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafe...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
The EBIC mode of an SEM has generally been used to measure the minority carrier properties of semico...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
A novel method is presented with the aim to perform minority carrier diffusion length map on cross-s...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
A new method of extracting minority carrier diffusion length from within a confined region of materi...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
The existing EBIC techniques for diffusion-length (DL) determination are reviewed and a new techniqu...
Junction-EBIC is used to characterize minority carrier diffusion lengths in heterojunction thin film...
Master´s thesis is focused on diagnostics of semiconductor materials by EBIC method (measuring of cu...
Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced cu...
A method of measurement of diffusion length L in p type c-Si wafers based on the lateral collection ...
A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafe...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
The EBIC mode of an SEM has generally been used to measure the minority carrier properties of semico...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
A novel method is presented with the aim to perform minority carrier diffusion length map on cross-s...