First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Mogniotte, Jean-François
Lazar, Mihai
Raynaud, Christophe
ALLARD, Bruno

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Publication date

October 2017

DOI

10.1109/SMICND.2017.8101191

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

International audienceThe limits of the current electronic solutions restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. AMPERE laboratory have developed SiC integrated circuits based on lateral MESFETs. This paper presents the first steps of the development of smart integrated driver circuit dedicated to harsh environments

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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Abstract

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First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments

Abstract

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