International audienceWe examine swift heavy ion-induced defect production in suspended single layer graphene using Raman spectroscopy and a two temperature molecular dynamics model that couples the ionic and electronic subsystems. We show that an increase in the electronic stopping power of the ion results in an increase in the size of the pore-type defects, with a defect formation threshold at 1.22e1.48 keV/layer. We also report calculations of the specific electronic heat capacity of graphene with different chemical potentials and discuss the electronic thermal conductivity of graphene at high electronic temperatures, suggesting a value in the range of 1 Wm1 K1. These results indicate that swift heavy ions can create nanopores in graphen...
Many of the proposed future applications of graphene require the controlled introduction of defects ...
International audienceWe show that the work function of exfoliated single layer graphene can be modi...
The relationship between the electrical properties and structure evolution of single layer graphene ...
International audienceWe examine swift heavy ion-induced defect production in suspended single layer...
International audienceThe ability to manufacture tailored graphene nanostructures is a key factor to...
The successful integration of graphene in future technologies, such as filtration and nanoelectronic...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV X...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV ...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
High-energy heavy ion irradiation is a very useful tool for the nanostructuring of 2D materials beca...
Graphene is an atomically-thin 2-dimentional layer of carbon atoms. Since 2004, it has been attracti...
It is a general consensus that silicon metal–oxide–semiconductor FET (MOSFET) is approaching its sca...
In this work, the effect of the ion fluence-dependent defect formation on the modification of surfac...
Many of the proposed future applications of graphene require the controlled introduction of defects ...
International audienceWe show that the work function of exfoliated single layer graphene can be modi...
The relationship between the electrical properties and structure evolution of single layer graphene ...
International audienceWe examine swift heavy ion-induced defect production in suspended single layer...
International audienceThe ability to manufacture tailored graphene nanostructures is a key factor to...
The successful integration of graphene in future technologies, such as filtration and nanoelectronic...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV X...
Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV ...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm 2)...
High-energy heavy ion irradiation is a very useful tool for the nanostructuring of 2D materials beca...
Graphene is an atomically-thin 2-dimentional layer of carbon atoms. Since 2004, it has been attracti...
It is a general consensus that silicon metal–oxide–semiconductor FET (MOSFET) is approaching its sca...
In this work, the effect of the ion fluence-dependent defect formation on the modification of surfac...
Many of the proposed future applications of graphene require the controlled introduction of defects ...
International audienceWe show that the work function of exfoliated single layer graphene can be modi...
The relationship between the electrical properties and structure evolution of single layer graphene ...