Investigation of the UTB-InAs-MOSFETs structure

International audienceAn Ultra-Thin-Body (UTB) InP/InAs/InGaAs MOSFETs is investigated. Computer Aided Design(CAD) tools are used to extract the electrical properties of this structure.Our simulation work gives us the possibility to extract the output characteristics, transfer characteristics and RF performances. With the small-signal equivalent circuit models, intrinsic elements are calculated from the Y-parameters matrix using AC analysis. To further improve the accuracy of the simulation, the effect of doping in the channel and source-drain regions, the Indium content in different layers are discussed and optimized. The results are validated with device characteristics of the fabricated 150 nm InP/InAs/InGaAs MOSFET. A high drain current of 665 mA/mm and extrinsic peak transconductance of 440 mS/mm are obtained at Vds = 0.7 V. A current gain cutoff frequency fT of 41.69 GHz and a simultaneous maximum oscillation frequency fmax of 94 GHz are estimated at Vds = 0.7 V and Vgs = 0.2 V