Low voltage operation of the scanning electron microscope is being increasingly used to avoid negative charging in e-beam inspection and metrology. Positive charging effects, however, may still disturb the measurement accuracy even with low primary beam energies. Current investigations have revealed that no errors due to positive charging occur on resist structures on semiconductor substrates. But samples with metal structures on insulating substrates do involve disturbing effects due to positive charging. The difference in behavior between these groups of samples is attributed to the fundamental difference between insulator and conductor charging. This difference is due to different field geometries on the respective surfaces
Voltages at various levels have been measured on unpassivated aluminum lines in an integrated circui...
Present scanning electron microscopy (SEM) linewidth measurement systems, although state of the art...
Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the sim...
The scanning electron microscope (SEM) usually operates with a beam voltage, V0, in the range of 10-...
Observation of insulators ' surface in low voltage scanning electron microscope (SEM) becomes u...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Thin and semithin sections were extensively examined by the secondary electron (SE) detector in a co...
A series of low voltage ( \u3c 5 keV) and low temperature ( \u3c 20K) cathodoluminescence (CL) measu...
Today the scanning electron microscope has become the tool for investigations on integrated circuits...
Low voltage imaging, X-ray microanalysis and X-ray mapping has become very important for the investi...
Electron yield is sensitive to surface modifications such as charging effects, surface roughness, an...
When imaging insulating specimens in a scanning electron microscope, negative charge accumulates loc...
The scanning electron microscope (SEM) has unique capabilities for high resolution examination of su...
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, ...
Voltages at various levels have been measured on unpassivated aluminum lines in an integrated circui...
Present scanning electron microscopy (SEM) linewidth measurement systems, although state of the art...
Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the sim...
The scanning electron microscope (SEM) usually operates with a beam voltage, V0, in the range of 10-...
Observation of insulators ' surface in low voltage scanning electron microscope (SEM) becomes u...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Thin and semithin sections were extensively examined by the secondary electron (SE) detector in a co...
A series of low voltage ( \u3c 5 keV) and low temperature ( \u3c 20K) cathodoluminescence (CL) measu...
Today the scanning electron microscope has become the tool for investigations on integrated circuits...
Low voltage imaging, X-ray microanalysis and X-ray mapping has become very important for the investi...
Electron yield is sensitive to surface modifications such as charging effects, surface roughness, an...
When imaging insulating specimens in a scanning electron microscope, negative charge accumulates loc...
The scanning electron microscope (SEM) has unique capabilities for high resolution examination of su...
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, ...
Voltages at various levels have been measured on unpassivated aluminum lines in an integrated circui...
Present scanning electron microscopy (SEM) linewidth measurement systems, although state of the art...
Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the sim...