ENGINEERING STRUCTURE AND PHASE VIA TEMPERATURE MANIPULATION IN THIN FILM OXIDES GROWN BY ALD

Atomic Layer Deposition (ALD) is a critical thin film deposition technology with applications spanning microelectronics, solar fuels and biological preservation due to its advantages of a wide precursor library for the majority of the periodic table, exquisite control over growth rates, and the ability to deposit at extremely low temperatures. One critical parameter in ALD growth is deposition temperature, which defines the “ALD window”—a temperature range in which ALD growth kinetics hold. Most ALD processes tend to be limited to deposition temperatures of