International audienceDC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar + O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide to prepare a periodic multilayered structure with various metalloid concentrations and nanometric dimensions. The same pulsing period was used for each deposition to produce metal-oxide periodic alternations close to 10 nm. Structure, crystallinity and chemical composition of these films were systematically investigated by Raman spectroscopy, X-ray diffraction and Energy-dispersiveX-ray spectroscopy techniques. The high re...
Thin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%-90% weight) targe...
The kinetics of phase transition and phase segregation induced by annealing temperature on Ti-W-O ga...
Thin films were obtained by r.f. reactive sputtering from a Ti0.1–W0.9 target followed by heating in...
International audienceDC reactive sputtering was used to deposit titanium and tungsten-based metal/o...
International audienceW/WOx multilayered thin films have been deposited by DC reactive sputtering us...
International audienceTungsten and tungsten oxide periodic nanometric multilayers have been deposite...
Periodic multilayers have found many applications in the fields of optics, mechanics or electronics....
International audienceDc reactive sputtering was used to deposit tantalum metal/oxide periodic nanom...
This study mainly aims to evaluate the intermixing between layers during the deposition of dielectri...
International audiencesputtering. The reactive gas pulsing process is involved to periodically injec...
Les multicouches périodiques ont trouvé de nombreuses applications dans les domaines de l’optique, d...
Multilayer structures of alternating thin titanium and tungsten oxide layers having dimensions of si...
WO3-TiO2 thin films were prepared by r.f. reactive sputtering from a Ti0.1---W0.9 target. Annealing ...
Tungsten oxide (WO3) has been a subject of high interest for its unique properties, and recently for...
In this study, tungsten oxide coatings were deposited by dc magnetron sputtering onto steel, glass a...
Thin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%-90% weight) targe...
The kinetics of phase transition and phase segregation induced by annealing temperature on Ti-W-O ga...
Thin films were obtained by r.f. reactive sputtering from a Ti0.1–W0.9 target followed by heating in...
International audienceDC reactive sputtering was used to deposit titanium and tungsten-based metal/o...
International audienceW/WOx multilayered thin films have been deposited by DC reactive sputtering us...
International audienceTungsten and tungsten oxide periodic nanometric multilayers have been deposite...
Periodic multilayers have found many applications in the fields of optics, mechanics or electronics....
International audienceDc reactive sputtering was used to deposit tantalum metal/oxide periodic nanom...
This study mainly aims to evaluate the intermixing between layers during the deposition of dielectri...
International audiencesputtering. The reactive gas pulsing process is involved to periodically injec...
Les multicouches périodiques ont trouvé de nombreuses applications dans les domaines de l’optique, d...
Multilayer structures of alternating thin titanium and tungsten oxide layers having dimensions of si...
WO3-TiO2 thin films were prepared by r.f. reactive sputtering from a Ti0.1---W0.9 target. Annealing ...
Tungsten oxide (WO3) has been a subject of high interest for its unique properties, and recently for...
In this study, tungsten oxide coatings were deposited by dc magnetron sputtering onto steel, glass a...
Thin films of the Ti-W-O system grown by r.f. reactive sputtering from a Ti-W (10%-90% weight) targe...
The kinetics of phase transition and phase segregation induced by annealing temperature on Ti-W-O ga...
Thin films were obtained by r.f. reactive sputtering from a Ti0.1–W0.9 target followed by heating in...