The relationship was explored between nanoscale voids in anodic aluminum oxide films and the surface condition of aluminum samples prior to anodizing. Transmission electron microscopy (TEM) detected voids on the order of 10 nm in anodic films. Atomic force microscopy (AFM) of these films, obtained after partial oxide dissolution, revealed surface cavities; comparison of TEM and AFM suggested that the cavities were the oxide voids. AFM images after variable extents of oxide dissolution showed that the voids were distributed evenly through the inner 60% of the film thickness, indicating that they were formed at the metal-oxide interface during film growth. Both AFM and TEM showed that the void concentration in the film was sensitive to the ex...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
Atomic force microscopy (AFM) was used to investigate the topographic characteristics of pitting sit...
A model for pit initiation during galvanostatic anodic etching of aluminum in acid chloride-containi...
The relationship was explored between nanoscale voids in anodic aluminum oxide films and the surface...
Positron annihilation spectroscopy (PAS) measurements were carried out to characterize open-volume d...
In this dissertation, numerical simulation was used to calculate the equilibrium solution compositio...
The mechanism was investigated by which pit initiation on aluminum foils during anodic etching is af...
Aluminum foils with two different surface topographic textures were anodically oxidized at constant ...
High-purity aluminum foils were examined using positron annihilation spectroscopy (PAS) after dissol...
While stress is thought to play an important role in the development of self-organized porous films,...
The mechanism accounting for the self-organization of nanoscale pores during anodic oxidation of alu...
The work is devoted to the study of the porous structure formation of anodic alumina films at the in...
The effect of impurities on formation of interfacial metallic voids, during uniform dissolution of a...
The morphology and the formation behavior of various types of defects in porous anodic films formed ...
Mechanism of the formation of pores in the anodic oxide films on Al in sulfuric acid solution was st...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
Atomic force microscopy (AFM) was used to investigate the topographic characteristics of pitting sit...
A model for pit initiation during galvanostatic anodic etching of aluminum in acid chloride-containi...
The relationship was explored between nanoscale voids in anodic aluminum oxide films and the surface...
Positron annihilation spectroscopy (PAS) measurements were carried out to characterize open-volume d...
In this dissertation, numerical simulation was used to calculate the equilibrium solution compositio...
The mechanism was investigated by which pit initiation on aluminum foils during anodic etching is af...
Aluminum foils with two different surface topographic textures were anodically oxidized at constant ...
High-purity aluminum foils were examined using positron annihilation spectroscopy (PAS) after dissol...
While stress is thought to play an important role in the development of self-organized porous films,...
The mechanism accounting for the self-organization of nanoscale pores during anodic oxidation of alu...
The work is devoted to the study of the porous structure formation of anodic alumina films at the in...
The effect of impurities on formation of interfacial metallic voids, during uniform dissolution of a...
The morphology and the formation behavior of various types of defects in porous anodic films formed ...
Mechanism of the formation of pores in the anodic oxide films on Al in sulfuric acid solution was st...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
Atomic force microscopy (AFM) was used to investigate the topographic characteristics of pitting sit...
A model for pit initiation during galvanostatic anodic etching of aluminum in acid chloride-containi...