We demonstrate the influence of interfacial strain on the growth modes of Ag films on Al(111), despite the small magnitude of the lattice misfit in this system. The strain is relieved by the formation of stacking fault domains bounded by Shockley partial dislocations. The growth mode and the step roughness appear to be strongly connected. Growth is three-dimensional (3D) as long as the steps are straight, but switches to 2D at higher coverage when the steps become rough. Anisotropic strain relaxation and straight steps seem to be related. We also report related observations for Al deposited on Ag(100)
Using density functional theory calculations, we have studied germanene growth on Al(111) in detail....
Medium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of...
A comprehensive analysis of submonolayer and multilayer Ag films deposited on Ag(100) is performed. ...
We have investigated the influence of strain on the morphology in metal heteroepitaxy at temperature...
Growth and strain behavior of thin Ag films on Si substrates have been investigated by scanning tunn...
Medium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of...
We have investigated the molecular beam epitaxy growth of highly strained InGaAs on GaAs(100) as a f...
Thin films are attracting more and more attention in both the industrial and scientific communities....
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Upon annealing above 620 K, submonolayers of Ag deposited on Pt(111) are known to mix into the first...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
The temperature (T) dependence of roughening as assessed by scanning tunneling microscopy is compare...
Materials consisting of grains or crystallites with sizes below a hundred nanometers have exhibited ...
Using density functional theory calculations, we have studied germanene growth on Al(111) in detail....
Medium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of...
A comprehensive analysis of submonolayer and multilayer Ag films deposited on Ag(100) is performed. ...
We have investigated the influence of strain on the morphology in metal heteroepitaxy at temperature...
Growth and strain behavior of thin Ag films on Si substrates have been investigated by scanning tunn...
Medium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of...
We have investigated the molecular beam epitaxy growth of highly strained InGaAs on GaAs(100) as a f...
Thin films are attracting more and more attention in both the industrial and scientific communities....
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Upon annealing above 620 K, submonolayers of Ag deposited on Pt(111) are known to mix into the first...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
While it is well known that growth conditions such as temperature greatly affect defect incorporatio...
The temperature (T) dependence of roughening as assessed by scanning tunneling microscopy is compare...
Materials consisting of grains or crystallites with sizes below a hundred nanometers have exhibited ...
Using density functional theory calculations, we have studied germanene growth on Al(111) in detail....
Medium energy ion scattering has been used to investigate depositions of 0.2, 1.4, 3.5 and 4.8 ML of...
A comprehensive analysis of submonolayer and multilayer Ag films deposited on Ag(100) is performed. ...