PENETRATION OF IMPURITIES INTO THE CRYSTAL LATTICE OF SOLID BODIES WITH THE HELP OF ION IMPLANTATION AND BOMBARDMENT

The article explains that by methods of ion implantation or bombardment it is possible to inject foreign impurities into the crystal lattice of metal substrates. For this purpose, a special experimental setup with a high vacuum condition is used. Under normal conditions, atoms or molecules of the atmosphere interact with the surface of solids. As a result of the diffusion process, atoms or molecules of the atmosphere penetrate into the near-surface region, into the crystal lattice of solids and form a connection of some type. Usually, this diffusion process occurs very slowly and for a long time, as a result, the penetration of foreign atoms or molecules into the crystal lattice of solids occurs in very small quantities. Various methods can be used to accelerate the diffusion of foreign atoms and molecules of matter, gas or solid body atoms, by ion implantation or bombardment. These methods make it possible without breaking the crystal lattice of solids or metals, introduces them in large quantities and at a sufficiently high speed, foreign impurities. This process can be carried out in special experimental facilities with high vacuum conditions. In order to obtain samples, the method of simultaneous bombardment with inert gas ions and thermal spraying of various metal materials on the surface of a substrate made of other metal materials was used. As a result of bombardment with inert gas ions, cathodic sputtering of the substrate material occurs and cascading collisions of gas ions with the atoms of the film and substrate materials, resulting in a process of mixing the atoms of the film and substrate material. The article describes the mechanisms of individual modes and prikryvaem cascading collisions. During the simultaneous bombardment of inert gas ions and thermal deposition of various metallic materials on the surface of the substrate, surface and near-surface areas of the crystal lattice of the film-substrate system, radiation-stimulated diffusion, defects, recombination of defects, particle annihilation, vacancies, migration of defects, etc. occur. The film-substrate systems obtained by this method change the physicochemical, mechanical, electrical, corrosion resistance, adhesion, mechanical hardening and other properties. Thus, the use of this method makes it possible to obtain a new type of materials for the needs of science and technolog