Three-dimensional growth of nanostructures can be used to reduce the threading dislocation density that degrades III-nitride laser performance. Here, nanowire-based hexagonal GaN microprisms with flat top and bottom c-facets are embedded between two dielectric distributed Bragg reflectors to create dislocation-free vertical optical cavities. The cavities are electron beam pumped, and the quality (Q) factor is deduced from the cavity-filtered yellow luminescence. The Q factor is ∼500 for a 1000 nm wide prism cavity and only ∼60 for a 600 nm wide cavity, showing the strong decrease in Q factor when diffraction losses become dominant. Measured Q factors are in good agreement with those obtained from quasi-3D finite element frequency-domain met...
Nitride microcavities offer an exceptional platform for the investigation of light–matter interactio...
III-nitride compound semiconductors have emerged as indispensable materials for a wide range of opto...
Photoluminescence measurements are used to investigate GaN microcavities formed between two all-oxid...
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in th...
III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light ...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optica...
ABSTRACT: In spite of the theoretical advantages associated with nitride microcavities, the quality ...
Arrays of III-nitride semiconductor micro-cone cavities with a base diameter of 3.3 mum were fabrica...
Arrays of InGaN MQW/GaN micro-cone cavities with a base diameter of 3.3 mum were fabricated by ion b...
We report a numerical and experimental investigation of fabrication tolerances and outcoupling in op...
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based micr...
The optical losses have been studied in a novel nanowire-based GaN vertical-cavity surface-emitting ...
Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum w...
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and smal...
Nitride microcavities offer an exceptional platform for the investigation of light–matter interactio...
III-nitride compound semiconductors have emerged as indispensable materials for a wide range of opto...
Photoluminescence measurements are used to investigate GaN microcavities formed between two all-oxid...
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in th...
III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light ...
The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Signifi...
We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optica...
ABSTRACT: In spite of the theoretical advantages associated with nitride microcavities, the quality ...
Arrays of III-nitride semiconductor micro-cone cavities with a base diameter of 3.3 mum were fabrica...
Arrays of InGaN MQW/GaN micro-cone cavities with a base diameter of 3.3 mum were fabricated by ion b...
We report a numerical and experimental investigation of fabrication tolerances and outcoupling in op...
We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based micr...
The optical losses have been studied in a novel nanowire-based GaN vertical-cavity surface-emitting ...
Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum w...
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and smal...
Nitride microcavities offer an exceptional platform for the investigation of light–matter interactio...
III-nitride compound semiconductors have emerged as indispensable materials for a wide range of opto...
Photoluminescence measurements are used to investigate GaN microcavities formed between two all-oxid...