InP is currently being used in various (opto)electronic and energy device applications. However, the high cost of InP substrates and associated epitaxial growth techniques has been huge impediments for its widespread use. Here, large-area monocrystalline InP thin films are demonstrated via a convenient cracking method, and the InP thin films show material properties identical to their bulk counterparts. Furthermore, the same substrate can be reused for the production of additional InP thin films. This cracking technique is also shown to be a versatile tool to form an ultrasmooth surface or a microscale periodic triangular grating structure on the surface, depending on the orientation of the donor substrate used. Strain-induced band gap ener...
Polycrystalline p-type InP films were grown on various insulating and conducting substrates, e.g., g...
The use of the low-cost thin-film vapor-liquid-solid (TF-VLS) method in the manufacturing of III-V s...
WOS: 000239289100017InP thin films were prepared on glass substrates by the spray pyrolysis techniqu...
Semiconductors made with earth abundant elements are promising as absorbers in future large-scale de...
Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular bea...
In order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant subs...
Indium phosphide films were prepared on (100) InP substrates by the planar reactive deposition techn...
To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have bee...
High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP sou...
ABSTRACT: A method for growth of ultralarge grain (>100 μm) semiconductor thin-films on nonepitax...
ABSTRACT: To date, some of the highest performance photocathodes of a photo-electrochemical (PEC) ce...
InP films have been deposited on amorphous sapphire substrate by means of the metallorganic chemical...
In recent years, the photovoltaic market has grown significantly as module prices have continued to ...
A method for growth of ultralarge grain (>100 μm) semiconductor thin-films on nonepitaxial substrate...
The strain relaxation of a series of In0.25Ga0.75As films grown on (100) InP substrates (lattice mis...
Polycrystalline p-type InP films were grown on various insulating and conducting substrates, e.g., g...
The use of the low-cost thin-film vapor-liquid-solid (TF-VLS) method in the manufacturing of III-V s...
WOS: 000239289100017InP thin films were prepared on glass substrates by the spray pyrolysis techniqu...
Semiconductors made with earth abundant elements are promising as absorbers in future large-scale de...
Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular bea...
In order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant subs...
Indium phosphide films were prepared on (100) InP substrates by the planar reactive deposition techn...
To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have bee...
High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP sou...
ABSTRACT: A method for growth of ultralarge grain (>100 μm) semiconductor thin-films on nonepitax...
ABSTRACT: To date, some of the highest performance photocathodes of a photo-electrochemical (PEC) ce...
InP films have been deposited on amorphous sapphire substrate by means of the metallorganic chemical...
In recent years, the photovoltaic market has grown significantly as module prices have continued to ...
A method for growth of ultralarge grain (>100 μm) semiconductor thin-films on nonepitaxial substrate...
The strain relaxation of a series of In0.25Ga0.75As films grown on (100) InP substrates (lattice mis...
Polycrystalline p-type InP films were grown on various insulating and conducting substrates, e.g., g...
The use of the low-cost thin-film vapor-liquid-solid (TF-VLS) method in the manufacturing of III-V s...
WOS: 000239289100017InP thin films were prepared on glass substrates by the spray pyrolysis techniqu...