Low temperature joining is desirable for aluminum-ceramics joining because aluminum has a large coefficient of thermal expansion. In the present work, joining of Al₂O₃ to Al was performed at room temperature by the two-step deposition method including Ni electroless deposition and Cu electrodeposition. The joining strength was increased, and the fracture mode changed from a fracture at the Ni/Al₂O₃ interface to that in the Al₂O₃ substrate by using a porous Al₂O₃ or by etching a dense Al₂O₃ surface. Thus, the present work demonstrates that Al₂O₃ and Al are successfully joined at room temperature without applying a load by the deposition method
[[abstract]]Electroless Ni (EN) plating method is employed to metallize Y2O3-doped AlN ceramic subst...
The main challenges for Al-Al wafer bonding are the fast oxidation and the high roughness of the Al ...
Ceramic-to-metal heterojunctions have been established to improve high-temperature stability for app...
Aluminum-aluminum thermo-compression wafer bonding is becoming increasingly important in the product...
Aluminumaluminum wafer bonding is becoming increasingly important in the production of CMOS microele...
Metal-Metal diffusion bonding was reassuring for micro electro mechanical system (MEMS) packaging an...
In this study, Al2O3-ceramics were joined via TLP bonding using interlayers of eutectic Au-12Ge (wt%...
Alumina has been joined at 1150 degrees C and 1400 degrees C using multilayer copper/niobium/copper ...
Alumina has been joined at 1150 degrees C and 1400 degrees C using multilayer copper/niobium/copper ...
[[abstract]]The electroless Ni (EN) plating method was employed to metallize the AlN ceramic substra...
The wetting behavior and strength at aluminum/alumina interfaces has been an active subject of resea...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
The present investigation aims to take a step forward for the transfer of a simple laboratory electr...
[[abstract]]Electroless Ni (EN) plating method is employed to metallize Y2O3-doped AlN ceramic subst...
The main challenges for Al-Al wafer bonding are the fast oxidation and the high roughness of the Al ...
Ceramic-to-metal heterojunctions have been established to improve high-temperature stability for app...
Aluminum-aluminum thermo-compression wafer bonding is becoming increasingly important in the product...
Aluminumaluminum wafer bonding is becoming increasingly important in the production of CMOS microele...
Metal-Metal diffusion bonding was reassuring for micro electro mechanical system (MEMS) packaging an...
In this study, Al2O3-ceramics were joined via TLP bonding using interlayers of eutectic Au-12Ge (wt%...
Alumina has been joined at 1150 degrees C and 1400 degrees C using multilayer copper/niobium/copper ...
Alumina has been joined at 1150 degrees C and 1400 degrees C using multilayer copper/niobium/copper ...
[[abstract]]The electroless Ni (EN) plating method was employed to metallize the AlN ceramic substra...
The wetting behavior and strength at aluminum/alumina interfaces has been an active subject of resea...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
Al2O3 bars were butt-joined by brazing with thin Al interlayers. After brazing, an attempt was made ...
The present investigation aims to take a step forward for the transfer of a simple laboratory electr...
[[abstract]]Electroless Ni (EN) plating method is employed to metallize Y2O3-doped AlN ceramic subst...
The main challenges for Al-Al wafer bonding are the fast oxidation and the high roughness of the Al ...
Ceramic-to-metal heterojunctions have been established to improve high-temperature stability for app...