Add to ORKGDislocation etch pits on α- or b-face of ferroelectric GASH crystal was studied. Spacial distribution of dislocation lines in GASH crystals was studied by continuous observation of dissolution process of α- or b-face and c-face. Dislocation which makes very small angle with c-plane causes a pit that accompanies a "wave front" of dissolution. Electron microscopic study of the pit was made and mechanism of etch pit formation is discussed
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an etching en...
It is shown that an etch pit on a crystal may be originated from one of the two causes. The first ca...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
An optical study is made of the etch pits produced by hydrofluoric acid on the cleavages of muscovit...
Well-defined triangular etch pits are produced on etching (002) cleavages of lithium carbonate singl...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by ther...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
Triangular etch pits on rhombohedral surfaces due to hydrothermal etching are reported. Our experime...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an etching en...
It is shown that an etch pit on a crystal may be originated from one of the two causes. The first ca...
Dislocation configurations in germanium single crystals developed during tensile deformation at 600℃...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
A modification of the etchant used by Levinstein and Robinson is shown to be a reliable solution in ...
An optical study is made of the etch pits produced by hydrofluoric acid on the cleavages of muscovit...
Well-defined triangular etch pits are produced on etching (002) cleavages of lithium carbonate singl...
The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produ...
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by ther...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
Triangular etch pits on rhombohedral surfaces due to hydrothermal etching are reported. Our experime...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...
An extended formation of faceted pit-like defects on Ge(0 0 1) and Ge(1 1 1) wafers was obtained by ...