In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly from fully elastically strained to partially relaxed due to collective formation of a misfit dislocation network. The transition at the critical thickness is associated with a characteristic density of misfits. These insights are gained from a technique developed to simulate misfit dislocations in a finite element framework, incorporating both elastic and plastic relaxation in a stationary heterostructure. We argue that these results have general relevance for mismatched heterostructures.Comment: Authors Thue Christian Thann and Tobias S{\ae}rkj{\ae}r contributed e...
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfa...
In the context of nanowire heterostructures we perform a discrete to continuum limit of the correspo...
Abstract. Epitaxially grown heterogeneous nanowires present dislocations at the interface between th...
The quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of ...
The mechanisms whereby 60° misfit dislocations are generated from dissociated threading dislocations...
Employing crystal plasticity theory and micromechanics inclusion theory, we developed a full-strain ...
Finite-element methods are used to simulate a heterostructured nanowire grown on a compliant mesa su...
We discuss an atomistic model for heterogeneous nanowires, allowing for dislocations at the interfac...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
8 pages, 6 figuresInternational audienceControlling the strain level in nanowire heterostructures is...
We study numerically the minimum energy path and energy barriers for dislocation nucleation in a two...
We numerically study the energetics and atomic mechanisms of misfit dislocation nucleation and stres...
Continuum elastic theory is applied to the formation of misfit dislocations and point defects in str...
Epitaxially grown heterogeneous nanowires present dislocations at the interface between the phases i...
Based on the dislocation theory of twinning, an analytical solution is given to determine the critic...
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfa...
In the context of nanowire heterostructures we perform a discrete to continuum limit of the correspo...
Abstract. Epitaxially grown heterogeneous nanowires present dislocations at the interface between th...
The quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of ...
The mechanisms whereby 60° misfit dislocations are generated from dissociated threading dislocations...
Employing crystal plasticity theory and micromechanics inclusion theory, we developed a full-strain ...
Finite-element methods are used to simulate a heterostructured nanowire grown on a compliant mesa su...
We discuss an atomistic model for heterogeneous nanowires, allowing for dislocations at the interfac...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
8 pages, 6 figuresInternational audienceControlling the strain level in nanowire heterostructures is...
We study numerically the minimum energy path and energy barriers for dislocation nucleation in a two...
We numerically study the energetics and atomic mechanisms of misfit dislocation nucleation and stres...
Continuum elastic theory is applied to the formation of misfit dislocations and point defects in str...
Epitaxially grown heterogeneous nanowires present dislocations at the interface between the phases i...
Based on the dislocation theory of twinning, an analytical solution is given to determine the critic...
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfa...
In the context of nanowire heterostructures we perform a discrete to continuum limit of the correspo...
Abstract. Epitaxially grown heterogeneous nanowires present dislocations at the interface between th...