Photoluminescence from Si1 12xGex strained layers grown by atmospheric pressure chemical vapor deposition

Low temperature photoluminescence due to the self-annihilation of bound excitons has been observed in Si1 12xGex strained layers grown using atmospheric pressure chemical vapor deposition. Samples were grown at temperatures near 1000\u2009\ub0C with growth rates up to 1000 nm per minute allowing short growth times, thus preventing extensive interdiffusion at layer interfaces. Well-resolved, bulk-like photoluminescence spectra with narrow no phonon linewidths were observed from strained SiGe material indicating it to be of suitable electronic quality. For a sample consisting of 120 nm of Si0.92Ge0.08 capped with 90 nm of Si on a Si(100) substrate, the photoluminescence spectrum exhibited Si1 12xGex bound exciton lines with resolved no phonon and transverse optic phonon components.Peer reviewed: YesNRC publication: Ye