Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm2 at 300 K with a lasing wavelength near 3.2 \u3bcm. The implication...
The authors acknowledge the financial support from the European Commission in the frame of the FP7 p...
AbstractAn analysis of the threshold current densities and differential slope efficiencies in interb...
We present recent progress achieved in the development of type-I GalnAsSb/AIGaAsSb quantum-well (QW)...
Interband cascade lasers with type-I InGaAsSb/AlAsSb quantum well active regions were demonstrated. ...
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA...
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
Interband cascade lasers are promising candidates to cover a wide spectral range in the mid infrared...
Interband cascade lasers are promising candidates to cover a wide spectral range in the mid infrared...
We report our progress to date in the development of type-H mterband cascade (IC) lasers emitting in...
Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operati...
Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operati...
The authors acknowledge the financial support from the European Commission in the frame of the FP7 p...
The authors acknowledge the financial support from the European Commission in the frame of the FP7 p...
AbstractAn analysis of the threshold current densities and differential slope efficiencies in interb...
We present recent progress achieved in the development of type-I GalnAsSb/AIGaAsSb quantum-well (QW)...
Interband cascade lasers with type-I InGaAsSb/AlAsSb quantum well active regions were demonstrated. ...
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA...
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
International audienceWe investigate the impact of the growth conditions of AlGaAsSb cladding layers...
Interband cascade lasers are promising candidates to cover a wide spectral range in the mid infrared...
Interband cascade lasers are promising candidates to cover a wide spectral range in the mid infrared...
We report our progress to date in the development of type-H mterband cascade (IC) lasers emitting in...
Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operati...
Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operati...
The authors acknowledge the financial support from the European Commission in the frame of the FP7 p...
The authors acknowledge the financial support from the European Commission in the frame of the FP7 p...
AbstractAn analysis of the threshold current densities and differential slope efficiencies in interb...
We present recent progress achieved in the development of type-I GalnAsSb/AIGaAsSb quantum-well (QW)...