Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 \u3bcm
- Jiao, Z. J.
- Lu, Z. G.
- Liu, J. R.
- Poole, P. J.
- Barrios, P. J.
- Poitras, D.
- Pakulski, G.
- Caballero, J.
- Zhang, X. P.
DOIAbstract
Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 \u3bcm is investigated both above and below the threshold. Above the threshold, LEFs at three different wavelengths around the gain peak of 1.53 \u3bcm by the injection locking technique are obtained to be 1.63, 1.37 and 1.59. Then by Hakki\u2013Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below the threshold. These small LEF values have clearly indicated that our developed InAs/InP QDs are perfect and promising gain materials for QD MWLs, QD mode-locked lasers (QD MLLs) and QD distributed-feedback (QD DFB) lasers around 1.5 \u3bcm.Peer reviewed: YesNRC publication: Ye
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