Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3\u2005dB emission bandwidth up to 140\u2005nm centred at 1100\u2005nm is achieved at a continuous-wave drive-current of 600\u2005mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.Peer reviewed: YesNRC publication: Ye