An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuouswave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.Peer reviewed: YesNRC publication: Ye
We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAsquantum dots(QDs...
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor het...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs)...
Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
Ultrawide bandwidth light-emitting diodes (LEDs) using eight layers of InAs/GaAs quantum dots (QDs) ...
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-...
We developed a near-infrared (NIR) superluminescent diode (SLD) based on self-assembled InAs quantum...
Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as th...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD)...
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by usi...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...
We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAsquantum dots(QDs...
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor het...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs)...
Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
Ultrawide bandwidth light-emitting diodes (LEDs) using eight layers of InAs/GaAs quantum dots (QDs) ...
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-...
We developed a near-infrared (NIR) superluminescent diode (SLD) based on self-assembled InAs quantum...
Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as th...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD)...
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by usi...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...
We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAsquantum dots(QDs...
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor het...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs)...