Monolithic integration of AlGaN/GaN HFET with MOS on silicon<111>substrates

AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon <111> substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon <111> substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.Peer reviewed: YesNRC publication: Ye