We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600\u2013700 \ub0C. In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.Peer reviewed: NoNRC publication: Ye
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its un...
pti e 31 ing full s h he 56.6 up to 69.6 nm. These results demonstrates that high In-content InGaN Q...
The impact of III-Nitride material and solid-state lighting on the world has been far-reaching. The ...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
We present recent progress in the growth of nitride-based laser diodes (LDs) made by plasma assisted...
Semiconductor nitrides have many applications for optoelectronic devices; particularly, blue-violet ...
This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular bea...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Cur...
In this work we study the growth of the Light Emitting Diodes (LEDs) by Plasma Assisted MBE (PAMBE)....
Room-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm2 for nitride-...
We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420...
AbstractIn this paper we shall discuss the development of blue light-emitting (LED) and laser diodes...
III-nitride light-emitting devices have been subjects of intense research for the last several decad...
A Gas-Source MBE system was modified for expitaxial growth of nitride based semiconductors and LED s...
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its un...
pti e 31 ing full s h he 56.6 up to 69.6 nm. These results demonstrates that high In-content InGaN Q...
The impact of III-Nitride material and solid-state lighting on the world has been far-reaching. The ...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE ...
We present recent progress in the growth of nitride-based laser diodes (LDs) made by plasma assisted...
Semiconductor nitrides have many applications for optoelectronic devices; particularly, blue-violet ...
This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular bea...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Cur...
In this work we study the growth of the Light Emitting Diodes (LEDs) by Plasma Assisted MBE (PAMBE)....
Room-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm2 for nitride-...
We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420...
AbstractIn this paper we shall discuss the development of blue light-emitting (LED) and laser diodes...
III-nitride light-emitting devices have been subjects of intense research for the last several decad...
A Gas-Source MBE system was modified for expitaxial growth of nitride based semiconductors and LED s...
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its un...
pti e 31 ing full s h he 56.6 up to 69.6 nm. These results demonstrates that high In-content InGaN Q...
The impact of III-Nitride material and solid-state lighting on the world has been far-reaching. The ...