The role of the free surface in determining the equilibrium position of misfit dislocations in thin epitaxial films is considered. When the film is elastically stiffer than the substrate, the core of the dislocation is predicted to lie at some distance from the interface in the softer substrate. On the other hand, when the film is softer than the substrate, the core of the dislocation is always predicted to lie close to the interface.NRC publication: Ye
Abstract. A theoretical model is proposed which describes a new physical micromechanism for relaxati...
Supported materials have been constructed by successively depositing ions onto a surface in conjunct...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
[[abstract]]The effect of substrate modulus difference on dislocation formation in an epitaxial film...
[[abstract]]The system of an epitaxial film on a semi-infinite substrate of a different material is ...
In a thin film system involving dissimilar materials, the residual stresses and microstructural defe...
International audienceThe quantitative study by transmission electron microscopy (TEM) of crystallin...
Elastic constants of an epilayer usually differ from that of its substrate. The effect of this diffe...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
A comparative analysis for the results obtained by force and energetic approaches, which are used in...
Crystalline films grown epitaxially on substrate consisting of different crystalline material are of...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
Based on the dislocation theory of twinning, an analytical solution is given to determine the critic...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
One critical issue in heteroepitaxial, lattice mismatched growth is the inevitable appearance of thr...
Abstract. A theoretical model is proposed which describes a new physical micromechanism for relaxati...
Supported materials have been constructed by successively depositing ions onto a surface in conjunct...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...
[[abstract]]The effect of substrate modulus difference on dislocation formation in an epitaxial film...
[[abstract]]The system of an epitaxial film on a semi-infinite substrate of a different material is ...
In a thin film system involving dissimilar materials, the residual stresses and microstructural defe...
International audienceThe quantitative study by transmission electron microscopy (TEM) of crystallin...
Elastic constants of an epilayer usually differ from that of its substrate. The effect of this diffe...
It is shown that very large stresses may be present in the thin films that comprise integrated circu...
A comparative analysis for the results obtained by force and energetic approaches, which are used in...
Crystalline films grown epitaxially on substrate consisting of different crystalline material are of...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
Based on the dislocation theory of twinning, an analytical solution is given to determine the critic...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
One critical issue in heteroepitaxial, lattice mismatched growth is the inevitable appearance of thr...
Abstract. A theoretical model is proposed which describes a new physical micromechanism for relaxati...
Supported materials have been constructed by successively depositing ions onto a surface in conjunct...
The critical thickness of an epilayer on a substrate with different elastic constants is investigate...