© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Conducting bridge random access memory materials have special promise for FLASH memory, other applications beside, and also special potential for continued miniaturization. They are electronic materials of unique flexibility. Here, we offer new models of Cu-doped alumina, and reveal qualitative differences in the behavior of transition metal ions in chalcogenide and oxide hosts, showing that Cu clusters in an amorphous alumina host, in contrast with chalcogenides in which the metal atoms do not cluster. We further elucidate the processes of electron transport. To determine these, the Kubo–Greenwood formula is cast in a form to enable the estimate of a space-projected conductivity. The meth...
Various parameters tied to the electrical conductivity of typical metals are estimated and are expr...
To understand and to analyze the transport properties of different metal-insulator systems, we devel...
In two publications, Kelly [1,2] has recently highlighted the poor prospects for practical quasi one...
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Conducting bridge random access memory materials...
© 2019 American Physical Society. We perform an ab initio modeling of amorphous copper-doped alumina...
Resistive random access memory (RRAM) is a prime candidate to replace Flash memory. Of the two class...
International audienceConductive filament formation and composition in Oxide-based Conductive Bridge...
Due to the mainstream CMOS technology facing a rapid approach to the fundamental downscaling limit, ...
Amorphous semiconductors with tailored ionic and electronic conductivities are central to the operat...
In this letter, we experimentally investigate data retention in a copper (Cu)-based conductive bridg...
We investigate the histograms of conductance values obtained during controlled electromigration thin...
The factors governing electronic transport properties of copper and gold atomic-size contacts are th...
A sound physical model for electric conduction in Ovonic materials is presented. Trap-limited condu...
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has ...
Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct atomi...
Various parameters tied to the electrical conductivity of typical metals are estimated and are expr...
To understand and to analyze the transport properties of different metal-insulator systems, we devel...
In two publications, Kelly [1,2] has recently highlighted the poor prospects for practical quasi one...
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Conducting bridge random access memory materials...
© 2019 American Physical Society. We perform an ab initio modeling of amorphous copper-doped alumina...
Resistive random access memory (RRAM) is a prime candidate to replace Flash memory. Of the two class...
International audienceConductive filament formation and composition in Oxide-based Conductive Bridge...
Due to the mainstream CMOS technology facing a rapid approach to the fundamental downscaling limit, ...
Amorphous semiconductors with tailored ionic and electronic conductivities are central to the operat...
In this letter, we experimentally investigate data retention in a copper (Cu)-based conductive bridg...
We investigate the histograms of conductance values obtained during controlled electromigration thin...
The factors governing electronic transport properties of copper and gold atomic-size contacts are th...
A sound physical model for electric conduction in Ovonic materials is presented. Trap-limited condu...
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has ...
Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct atomi...
Various parameters tied to the electrical conductivity of typical metals are estimated and are expr...
To understand and to analyze the transport properties of different metal-insulator systems, we devel...
In two publications, Kelly [1,2] has recently highlighted the poor prospects for practical quasi one...