Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas
- Studenikin, S. A.
- Sachrajda, A. S.
- Gupta, J. A.
- Wasilewski, Zbigniew
- Fedorych, O. M.
- Byszewski, M.
- Maude, D. K.
- Potemski, M.
- Hilke, M.
- West, K. W.
- Pfeiffer, L. N.
DOIAbstract
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs 15AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120GHz, MIROs start to quench, while above 230GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.NRC publication: Ye
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