Few electron lateral quantum dot molecules have been fabricated and studied using both transport and charge detection techniques. Such devices are ultimately planned for quantum information applications such as charge and spin based qubits. Measurements have been performed for several specific configurations (n,m) relevant for quantum information where n and m refer to the measured number of electrons in each dot e.g. (5,5) the lowest occupancy configuration with a filling factor 2 state. Measurements were made as a function of magnetic field and the tunnel coupling between the dots.NRC publication: Ye
We performed charge detection on a lateral triple quantum dot with starlike geometry. The setup allo...
Transport measurements are presented on a class of electrostatically defined lateral dots within a h...
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on eas...
Coupled few-electron dots with incorporated quantum point-contact charge detectors have been success...
We review some electron transport experiments on few-electron, vertical quantum dot devices. The mea...
This thesis describes a series of experiments aimed at understanding and controlling single electron...
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized i...
Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mes...
We report charge detection studies of a lateral double quantum dot with controllable charge states a...
Few electron electrostatically gated quantum dots have been developed historically with two main pur...
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized i...
Few electron electrostatically gated quantum dots have been developed historically with two main pur...
With noninvasive methods, we investigate ground and excited states of a lateral quantum dot. Charge ...
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vert...
2”Auch in Wissenschaften kann man eigentlich nichts wissen, es will immer getan sein.” Johann Wolfga...
We performed charge detection on a lateral triple quantum dot with starlike geometry. The setup allo...
Transport measurements are presented on a class of electrostatically defined lateral dots within a h...
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on eas...
Coupled few-electron dots with incorporated quantum point-contact charge detectors have been success...
We review some electron transport experiments on few-electron, vertical quantum dot devices. The mea...
This thesis describes a series of experiments aimed at understanding and controlling single electron...
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized i...
Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mes...
We report charge detection studies of a lateral double quantum dot with controllable charge states a...
Few electron electrostatically gated quantum dots have been developed historically with two main pur...
A laterally defined InGaAs double quantum dot with an integrated charge readout sensor is realized i...
Few electron electrostatically gated quantum dots have been developed historically with two main pur...
With noninvasive methods, we investigate ground and excited states of a lateral quantum dot. Charge ...
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vert...
2”Auch in Wissenschaften kann man eigentlich nichts wissen, es will immer getan sein.” Johann Wolfga...
We performed charge detection on a lateral triple quantum dot with starlike geometry. The setup allo...
Transport measurements are presented on a class of electrostatically defined lateral dots within a h...
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on eas...