Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
- Shen, A.
- Matsukura, F.
- Guo, S. P.
- Sugawara, Y.
- Ohno, H.
- Tani, M.
- Abe, H.
- Liu, H. C.
DOIAbstract
GaAs and (Ga,Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.NRC publication: Ye
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