InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2Cl2 treatments, observations using atomic force microscopy indicated that the sample surface was rougher than the as-received sample. Some residual oxide was also identified by Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis. Treatment of InP(100) in (NH4)2S and Br2/MeOH solutions containing trace amounts of S2Cl2 and (NH4)2S significantly reduced the surface roughness of the as-received sample. These treated surfaces were also found to be free of oxide and S passivated. These solutions therefore effectively removed the native oxide leaving substrates approaching atomic flatness and subsequently passivated surfaces w...
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...
InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auge...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties o...
Abstract—In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of In...
Ex-situ aqueous (NH4)(2)S treated sulfur-passivated InP substrates have been studied using ultrahigh...
Auger electron spectroscopy, low-energy electron diffraction, thermal desorption spectroscopy, and s...
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(1...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
A wet-chemical process has been developed to passivate the Si(100) surface with sulfur (S) in an aqu...
Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal anneal...
The quaternary III\u2013V compound semiconductor GaInAsP is an important material for many optoelect...
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...
InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auge...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties o...
Abstract—In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of In...
Ex-situ aqueous (NH4)(2)S treated sulfur-passivated InP substrates have been studied using ultrahigh...
Auger electron spectroscopy, low-energy electron diffraction, thermal desorption spectroscopy, and s...
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(1...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
A wet-chemical process has been developed to passivate the Si(100) surface with sulfur (S) in an aqu...
Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal anneal...
The quaternary III\u2013V compound semiconductor GaInAsP is an important material for many optoelect...
[[abstract]]The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchro...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...