Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 to 300 K

We have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon-phonon interaction.NRC publication: Ye