We characterized microscopic patterns of TiSi2 using atomic force microscopy and scanning tunneling microscopy, to test the possibility of using silicide contacts for experiments on the nanoscopic scale. We observed the effect on the morphology of incomplete formation of the disilicide, and studied the growth of lateral extension due to atomic diffusion. Upon diffusion, the silicide forms a neat and clean interface some hundreds of nanometers from the bulk electrode. That spreading phenomenon is our central focus, as we believe it may be useful in future efforts to make narrowly spaced contacts.NRC publication: Ye
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
Metal silicides have been used extensively in microelectronics devices, such as contacts and local i...
[[abstract]]Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapi...
The suitability of titanium disilicide (TiSi2) contacts for use in electronic transport measurements...
Cette thèse porte sur l'étude des phénomènes qui se produisent lors de la réaction métal-silicium (s...
We present a widely scalable, high temperature post-growth annealing method for converting ultra-thi...
Titanium silicide (TiSi2) is well known for application as a local interconnect material in compleme...
A Si/W/Ti tr i layer s t ructure wh ich consists of a top insulat ing Si film, a midd le lateral gro...
Microscopic four-probe TiSi2 electrodes were fabricated on clean Si(111) surfaces and characterized ...
In this paper we present results of transmission electron microscopy observation of the formation pr...
Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb...
[[abstract]]A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor de...
The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investig...
Nanotechnology devices require low resistance contacts, which can be fabricated by the incorporation...
The physical properties including the mechanical, optical and electrical properties of Ti nitrides a...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
Metal silicides have been used extensively in microelectronics devices, such as contacts and local i...
[[abstract]]Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapi...
The suitability of titanium disilicide (TiSi2) contacts for use in electronic transport measurements...
Cette thèse porte sur l'étude des phénomènes qui se produisent lors de la réaction métal-silicium (s...
We present a widely scalable, high temperature post-growth annealing method for converting ultra-thi...
Titanium silicide (TiSi2) is well known for application as a local interconnect material in compleme...
A Si/W/Ti tr i layer s t ructure wh ich consists of a top insulat ing Si film, a midd le lateral gro...
Microscopic four-probe TiSi2 electrodes were fabricated on clean Si(111) surfaces and characterized ...
In this paper we present results of transmission electron microscopy observation of the formation pr...
Kinetics and mechanisms of metastable (C49-TiSi$\sb2)$ and stable titanium disilicides (C54-TiSi$\sb...
[[abstract]]A C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor de...
The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investig...
Nanotechnology devices require low resistance contacts, which can be fabricated by the incorporation...
The physical properties including the mechanical, optical and electrical properties of Ti nitrides a...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
Metal silicides have been used extensively in microelectronics devices, such as contacts and local i...
[[abstract]]Titanium silicide was formed on the top of Si wafers by arsenic ion beam mixing and rapi...