Deposition of iridium thin films using new IrI CVD precursors

The syntheses of three volatile IrI cyclooctadiene precursors is described. The anionic ligand was carefully selected to produce a structure (see Figure) with physical properties suitable for CVD requirements. Films grown using oxygen as carrier gas produced iridium thin films with a purity higher than 98 % and a measured resistivity in the range of 8.4 to 10.2 \u3bc\u3a9 cm.NRC publication: Ye