Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation

Ion implantation induced Quantum Well (QW) intermixing using high energies (2 to 8 MeV As\u207a and P\u207a) has been shown to be an effective technique for achieving spatially selective tuning of QW laser structures (InGaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the InGaAs/GaAs QW laser structure, using photoluminescence as a diagnostic tool to help optimise these parameters. This work is then extended to the InGaAs/InP QW laser structure where significant differences are observed, in particular concerning the ion implantation depth relative to the depth of the QWs.NRC publication: Ye