We have observed extremely sharp (\u394 \u2dc 0.01 meV) discontinuities in the photoluminescence excitation (PLE) spectra of GaAs/Al\u2093Ga\u2081\u208b\u2093As single quantum wells under hydrostatic pressure at low temperatures. These discontinuities are found to originate from abrupt changes in the photoluminescence (PL) spectrum as a function of the excitation energy. Near each discontinuity, the PL spectrum shows a doublet for excitation energies on one side of the discontinuity, and only a single peak for excitation energies on the other side. The lower energy peak of the doublet is completely quenched on the other side of the discontinuity, which means that by changing the excitation photon energy slightly, the PL mechanism responsibl...
URL:http://link.aps.org/doi/10.1103/PhysRevB.58.7222 DOI:10.1103/PhysRevB.58.7222The temperature an...
The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 an...
International audienceQuantum well systems based on semiconductors with the wurtzite crystalline str...
Time-integrated and time-resolved photoluminescence studies of GaAs-AlAs single quantum wells under ...
The mixing between the Γ and X conduction-band valleys in GaAs-Ga 1-xAl xAs quantum wells is investi...
URL:http://link.aps.org/doi/10.1103/PhysRevB.33.8416 ; DOI:10.1103/PhysRevB.33.8416Photoluminescenc...
The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angst...
The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investiga...
This thesis describes an experimental investigation of the photoluminescence emissions from firstly,...
URL:http://link.aps.org/doi/10.1103/PhysRevB.31.4106 DOI:10.1103/PhysRevB.31.4106The pressure depen...
We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs ...
This thesis describes an experimental investigation of the photoluminescence emissions from firstly,...
Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostat...
Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostat...
The low-temperature direct and indirect optical transitions in double-barrier Al0.3Ga0.7As/AlAs/GaAs...
URL:http://link.aps.org/doi/10.1103/PhysRevB.58.7222 DOI:10.1103/PhysRevB.58.7222The temperature an...
The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 an...
International audienceQuantum well systems based on semiconductors with the wurtzite crystalline str...
Time-integrated and time-resolved photoluminescence studies of GaAs-AlAs single quantum wells under ...
The mixing between the Γ and X conduction-band valleys in GaAs-Ga 1-xAl xAs quantum wells is investi...
URL:http://link.aps.org/doi/10.1103/PhysRevB.33.8416 ; DOI:10.1103/PhysRevB.33.8416Photoluminescenc...
The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angst...
The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investiga...
This thesis describes an experimental investigation of the photoluminescence emissions from firstly,...
URL:http://link.aps.org/doi/10.1103/PhysRevB.31.4106 DOI:10.1103/PhysRevB.31.4106The pressure depen...
We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs ...
This thesis describes an experimental investigation of the photoluminescence emissions from firstly,...
Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostat...
Photoluminescence from a GaN0.015As0.985/GaAs quantum well has been measured at 15 K under hydrostat...
The low-temperature direct and indirect optical transitions in double-barrier Al0.3Ga0.7As/AlAs/GaAs...
URL:http://link.aps.org/doi/10.1103/PhysRevB.58.7222 DOI:10.1103/PhysRevB.58.7222The temperature an...
The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 an...
International audienceQuantum well systems based on semiconductors with the wurtzite crystalline str...