Effect of implantation dose on photoluminescence decay times in intermixed GaAs/AlGaAs quantum wells

The effect of ion implantation induced intermixing on the effective radiative lifetimes in GaAs/AlGaAs quantum wells is investigated using the technique of time-resolved photoluminescence (TRPL). Below the critical dose, the carrier lifetimes appear enhanced by the processing although no changes are discernible in the continuous wave photoluminescence (CWPL) spectra. Above the critical dose, carrier lifetimes are reduced by residual defects created in the intermixed wells by the implantation procedure. These observations demonstrate the greater sensitivity of TRPL over CWPL in detecting residual damage produced by processing quantum well material.NRC publication: Ye