Transmission electron microscopy characterization of InAlSb/InSb bilayers and superlattices

High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been characterized by transmission electron microscopy. It was found that single layers of InAlSb, whose thicknesses greatly exceeded the equilibrium critical thickness, could be grown coherently on (001) InSb for Al concentrations approaching 13-15%. Also, it was observed that planar defects increased in density for both the bilayer and superlattice structures as the Al concentration increased.NRC publication: Ye