We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increases from 5 to 60 nm in the samples annealed at 900 8Cup to 20–90 nm in the samples annealed at 1100 8C. An existence of significant mechanical stresses within implanted layers has been detected. The stress values have been calculated from the shift of the Si first order Raman band. For the samples annealed at 900 8C a broad band in the spectral region of about 0.75–1.05 eV is detected in the PL spectra. The nature of this PL band is discussed
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using s...
In this paper we discuss ion-beam-assisted nanocrystal nucleation in amorphized silicon (a-Si) layer...
Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into ...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation ...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb ...
Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb io...
We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantat...
Atomic-force microscopy, photoluminescence, and Raman scattering are used to study the formation of ...
The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetro...
We have investigated the structural and the optical properties of GaSb films with a thin AlSb buffer...
The first reports that nanostructured silicon emits radiation in the visible wavelength date back tw...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
The use of Focused Ion Beam (FIB) in micromanufacturing has been prevalent since its invention in th...
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in the ...
Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by io...
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using s...
In this paper we discuss ion-beam-assisted nanocrystal nucleation in amorphized silicon (a-Si) layer...
Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into ...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation ...
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb ...
Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb io...
We have studied the ion-beam synthesis of InAs and GaSb nanocrystals in Si by high-fluence implantat...
Atomic-force microscopy, photoluminescence, and Raman scattering are used to study the formation of ...
The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetro...
We have investigated the structural and the optical properties of GaSb films with a thin AlSb buffer...
The first reports that nanostructured silicon emits radiation in the visible wavelength date back tw...
The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Phot...
The use of Focused Ion Beam (FIB) in micromanufacturing has been prevalent since its invention in th...
The direct growth of GaSb buffer layers on Si substrates is attracting considerable interest in the ...
Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by io...
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using s...
In this paper we discuss ion-beam-assisted nanocrystal nucleation in amorphized silicon (a-Si) layer...
Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into ...