Correcting single and detecting adjacent errors has become important in memory systems using high density DRAM chips. The reason is that, in these systems, the strike of a single energetic particle can upset one or more adjacent bits. In this article, we present a simple solution for this problem based on integer codes capable of correcting single errors and detecting l -bit burst errors confined to a b -bit byte ( 1<l<b ). Unlike the classical approach, the proposed one does not rely on the use of dedicated encoding/decoding hardware. Instead, it uses the processor as both encoder and decoder. The effectiveness of such solution is demonstrated on a theoretical model of an eight-core processor. The obtained results show that it has the pote...
This letter presents a class of integer codes capable of correcting single errors. Unlike Hamming co...
This article presents a class of integer codes that are suitable for use in optical computer network...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...
Correcting single and detecting adjacent errors has become important in memory systems using high de...
This paper presents two classes of integer codes that are suitable for use in local area networks. T...
This paper presents two types of integer codes capable of correcting burst asymmetric errors within ...
With scaling down of device and increasing memory density, reliability of SRAM faces severe challeng...
In this paper, we present a class of integer codes capable of correcting burst asymmetric errors. Th...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
This paper presents two types of integer codes capable of correcting burst asymmetric errors within ...
This paper presents a class of integer codes suitable for use in optical networks with low error rat...
In most communication networks, error probabilities 1 → 0 and 0 → 1 are equally likely to occur. How...
This paper studies linear codes capable of detecting and correcting solid burst error of length b or...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
This letter presents a class of integer codes capable of correcting single errors. Unlike Hamming co...
This article presents a class of integer codes that are suitable for use in optical computer network...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...
Correcting single and detecting adjacent errors has become important in memory systems using high de...
This paper presents two classes of integer codes that are suitable for use in local area networks. T...
This paper presents two types of integer codes capable of correcting burst asymmetric errors within ...
With scaling down of device and increasing memory density, reliability of SRAM faces severe challeng...
In this paper, we present a class of integer codes capable of correcting burst asymmetric errors. Th...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
This paper presents two types of integer codes capable of correcting burst asymmetric errors within ...
This paper presents a class of integer codes suitable for use in optical networks with low error rat...
In most communication networks, error probabilities 1 → 0 and 0 → 1 are equally likely to occur. How...
This paper studies linear codes capable of detecting and correcting solid burst error of length b or...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
This letter presents a class of integer codes capable of correcting single errors. Unlike Hamming co...
This article presents a class of integer codes that are suitable for use in optical computer network...
Abstract—Codes that correct limited-magnitude errors for multi-level cell nonvolatile memories, such...