3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
- Gerrer, Louis
- Adamu-Lema, Fikru
- Amoroso, Salvatore Maria
- Markov, Stanislav
- Asenov, Asen
Publication date
January 2012
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes. © 2012 IEEE.Link_to_subscribed_fulltex
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