Add to ORKGWe study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the case of a gradual band gap transition at the Si/SiO2 interface. A linear band gap transition of 0.5 nm at the SiO2 side results in nearly 20% redistribution of carriers from the 2-fold to the 4-fold degenerate valley, due to the greater wave-function penetration and sub-band level lowering for the 4-fold valley. The gate capacitance is enhanced by up to 12% for a 1.0 nm nominal oxide thickness, and the direct tunnelling current density increases by an order of magnitude.Link_to_subscribed_fulltex
Incorporating recent data for the Si/SiO2 and SiO 2/HfO2 interface properties, we simulate the impac...
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k laye...
The significance of interface sharpness between interlayers and high-k oxides for the properties of ...
We study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the...
Density functional theory simulation results of the atomic structure at the Si-SiO 2 interface impli...
Density functional theory simulation results of the atomic structure at the Si-SiO2 interface implie...
Density functional theory simulation results of the atomic structure at the Si–SiO2 interface implie...
This paper shows that a structural transition layer of SiO2 exists at an SiO~/Si interface prepared ...
The gradual transition of the band-gap at the Si-SiO<sub>2</sub> interface affects quant...
As design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structure...
Transition regions at Si-SiO2 interfaces contain excess suboxide bonding arrangements, which can giv...
Incorporating recent data for the Si/SiO2 and SiO2/HfO2 interface properties, we simulate the impact...
In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal...
Recently the thin SiO2(silicon dioxide) Layer whose thickness is nanometer order is used generally i...
We characterize the transition structure at the Si(100)-SiO2 interface by addressing the inverse ion...
Incorporating recent data for the Si/SiO2 and SiO 2/HfO2 interface properties, we simulate the impac...
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k laye...
The significance of interface sharpness between interlayers and high-k oxides for the properties of ...
We study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the...
Density functional theory simulation results of the atomic structure at the Si-SiO 2 interface impli...
Density functional theory simulation results of the atomic structure at the Si-SiO2 interface implie...
Density functional theory simulation results of the atomic structure at the Si–SiO2 interface implie...
This paper shows that a structural transition layer of SiO2 exists at an SiO~/Si interface prepared ...
The gradual transition of the band-gap at the Si-SiO<sub>2</sub> interface affects quant...
As design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structure...
Transition regions at Si-SiO2 interfaces contain excess suboxide bonding arrangements, which can giv...
Incorporating recent data for the Si/SiO2 and SiO2/HfO2 interface properties, we simulate the impact...
In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal...
Recently the thin SiO2(silicon dioxide) Layer whose thickness is nanometer order is used generally i...
We characterize the transition structure at the Si(100)-SiO2 interface by addressing the inverse ion...
Incorporating recent data for the Si/SiO2 and SiO 2/HfO2 interface properties, we simulate the impac...
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k laye...
The significance of interface sharpness between interlayers and high-k oxides for the properties of ...