Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects os microstructure and chemical composition
- Cerqueira, M. F.
- Losurdo, M.
- Stepikhova, M.
- Alpuim, P.
- Andrês, G.
- Kozanecki, A.
- Soares, Manuel Jorge
- Peres, M.
Publication date
January 2009
DOI Publisher
Elsevier BV Journal
Thin Solid FilmsAbstract
Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.FCT Project POCTI/CTM/39395/2001INTAS Project #03-51-648
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