In this chapter, a photodetector using a single indium antimonide (InSb) nanowire is shown to effectively detect infrared (IR) signals at room temperature. Indium antimonide nanowires with diameters of 10-35 nm and tens of microns long were grown by the vapor-liquid-solid approach using an InSb powder source and Au catalyst. The quantum confinement can modify the band gap energy when the diameter of the nanowires is smaller than the Bohr radius, making the fabrication of InSb photodetectors covering both near infra red and mid infra red in feasible. Both symmetric and asymmetric InSb nanowire photodetectors were fabricated and investigated under NIR and MIR irradiation. High quantum efficiency was observed for a 10-nm InSb nanowire photodet...
We have investigated two devices for detection of radiation, typically in the infrared range, Photon...
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applicat...
Indium antimonide (InSb) has the smallest energy gap in the binary III-V materials, with a cut off ...
Bulk indium antimonide (InSb) is an III-V semiconductor compound that is widely used to detect infra...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by...
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very ...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
InSb nanowire arrays have been fabricated by direct current electrodeposition inside the nanochan-ne...
Photoconductors using vertical arrays of InAs/InAs1-xSbx nanowires with varying Sb composition x hav...
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated...
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated...
We have investigated two devices for detection of radiation, typically in the infrared range, Photon...
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applicat...
Indium antimonide (InSb) has the smallest energy gap in the binary III-V materials, with a cut off ...
Bulk indium antimonide (InSb) is an III-V semiconductor compound that is widely used to detect infra...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by...
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very ...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
InSb nanowire arrays have been fabricated by direct current electrodeposition inside the nanochan-ne...
Photoconductors using vertical arrays of InAs/InAs1-xSbx nanowires with varying Sb composition x hav...
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated...
Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated...
We have investigated two devices for detection of radiation, typically in the infrared range, Photon...
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applicat...
Indium antimonide (InSb) has the smallest energy gap in the binary III-V materials, with a cut off ...