Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications

BaTi03 with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTi03 CTL, the one with Hf-doped BaTi03 shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTi03• Therefore, the Hf-doped BaTi03 is a promising candidate as CTL for flash memory application.published_or_final_versio