Add to ORKGElectron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields is reported. The current-voltage (I-V) characteristic exhibited the feature of negative differential velocity (NDV) and high electric field domain effect at different biases. Under strong magnetic fields, sequential resonant tunnelling through Landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. © 1998 Elsevier Science B.V. All rights reserved.link_to_subscribed_fulltex
Conductivité négative différentielle (CND) et bistabilité en courant dans une structure tunnel réson...
We report the observation of inelastic and resonant tunneling in a study of electronic transport per...
We investigate the influence of a transverse magnetic field on the current-voltage characteristics o...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We observed the transverse magnetic field induced transition from static to dynamic electric field d...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/A...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
Conductivité négative différentielle (CND) et bistabilité en courant dans une structure tunnel réson...
We report the observation of inelastic and resonant tunneling in a study of electronic transport per...
We investigate the influence of a transverse magnetic field on the current-voltage characteristics o...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
Electron transport in heavily-doped GaAs/AlAs superlattices in parallel electric and magnetic fields...
We observed the transverse magnetic field induced transition from static to dynamic electric field d...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneli...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have observed the transition from static to dynamic electric field domain formation induced by a ...
We have studied the vertical transport and formation mechanisms of electric field domains in doped w...
We investigate the transition from static to dynamic electric field domains (EFDs) in a doped GaAs/A...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices un...
Conductivité négative différentielle (CND) et bistabilité en courant dans une structure tunnel réson...
We report the observation of inelastic and resonant tunneling in a study of electronic transport per...
We investigate the influence of a transverse magnetic field on the current-voltage characteristics o...