A study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La2O3 as gate insulator

A new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La203 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor.published_or_final_versionThe 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2010), Hong Kong, China, 15-17 December 2010. In IEEE EDSSC Proceedings, 2010, p. 1-