A study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La 2O 3 as gate insulator

A new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La 2O 3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor. © 2010 IEEE.link_to_subscribed_fulltex