Add to ORKGGaN-based micro- light emitting diode (μ-LED) arrays with 64x64 elements were fabricated. With the introduction of a matrix addressing scheme, the number of bond pads was reduced from n2 to 2n, facilitating the packages of the devices.link_to_subscribed_fulltex
We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging...
We report progress in control of the emission from both parallel-addressed and matrix-addressed micr...
Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressab...
The fabrication and performance of GaN-based micro-light emitting diode (g-LED) arrays with 64×64 el...
The fabrication and performance of GaN-based micro-light emitting diode (μ-LED) arrays with 64 × 64 ...
The fabrication and performance of GaN-based micro-light emitting diode (-LED) arrays with 64 × 64 e...
The main task involved in the development of micro-LED arrays relates to the electrical contacting a...
We describe the fabrication and characterization of matrix-addressable microlight-emitting diode (mi...
We demonstrate the development, performance and application of a novel GaN-based micro-light emittin...
This paper is about matrix-addressable 370nm micro-LED arrays with integrated polymer micro-lenses. ...
Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applicatio...
Matrix-addressable light emitting diode (LED) micro-arrays on sapphire substrates have been reported...
The advances in fabrication technology bring arrays to the threshold of advanced research and commer...
The rapid development of display technologies has raised interest in arrays of self-emitting, indivi...
A novel method of etching which allows the direct interconnection of multiple GaN-based devices is i...
We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging...
We report progress in control of the emission from both parallel-addressed and matrix-addressed micr...
Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressab...
The fabrication and performance of GaN-based micro-light emitting diode (g-LED) arrays with 64×64 el...
The fabrication and performance of GaN-based micro-light emitting diode (μ-LED) arrays with 64 × 64 ...
The fabrication and performance of GaN-based micro-light emitting diode (-LED) arrays with 64 × 64 e...
The main task involved in the development of micro-LED arrays relates to the electrical contacting a...
We describe the fabrication and characterization of matrix-addressable microlight-emitting diode (mi...
We demonstrate the development, performance and application of a novel GaN-based micro-light emittin...
This paper is about matrix-addressable 370nm micro-LED arrays with integrated polymer micro-lenses. ...
Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applicatio...
Matrix-addressable light emitting diode (LED) micro-arrays on sapphire substrates have been reported...
The advances in fabrication technology bring arrays to the threshold of advanced research and commer...
The rapid development of display technologies has raised interest in arrays of self-emitting, indivi...
A novel method of etching which allows the direct interconnection of multiple GaN-based devices is i...
We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging...
We report progress in control of the emission from both parallel-addressed and matrix-addressed micr...
Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressab...