Surface acoustic wave quantum well modulators with a large number of quantum wells

Electroabsorptive and electrooptic 100 angstroms/100 angstroms Al0.3Ga0.7As/GaAs 25 period surface acoustic wave (SAW) quantum well (QW) modulators are investigated. Since SAW effects decay nonuniformly with depth in the structure, the location of the QW region needs to be designed carefully. For a thick QW region, a large uniform SAW induced electric field is required and thus the QW region is located at a depth of approximately 2/3 the SAW wavelength below the surface. A deposited ZnO film is also required to enhance the electric field induced by SAW and long SAW wavelength is used to obtain a more linear SAW potential.link_to_subscribed_fulltex