Off-state gate leakage current in N-channel MOSFET's with gate dielectrics prepared by different techniques

The off-stage current of n-channel MOSFET's with thermal oxide (OX), reoxidized NH3-nitrided oxide (RONO), N20N, and N20G oxides as gate dielectrics is investigated. The gate current condition mechanism in low field region is found to be very different for these oxides. Enhanced conductivity in RONO and N20G oxides as a result of trap-assisted mechanism is observed. Basing from these observations, it is concluded that the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N2O ambient.link_to_subscribed_fulltex